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HY62UF16804B Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No 00 01 History Initial Release DC Para Change Icc 4mA a Icc1(Min) 40mA a Icc1(1us) 8mA a Isb 0.1mA a Isb1 25uA a Iccdr 12uA a Draft Date May.29.2001 Mar.20.2002 3mA 20mA 2mA 0.3mA 15uA 6uA Remark Preliminary
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 /Mar.2002 Hynix Semiconductor
HY62UF16804B
Preliminary DESCRIPTION
The HY62UF16804B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits. The HY62UF16804B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Product Voltage Speed No. (V) (ns) HY62UF16804B-C 2.7~3.3 55/70/85 HY62UF16804B-I 2.7~3.3 55/70/85 Note 1. C : Commercial, I : Industrial 2. Current value is max.
FEATURES
* Fully static operation and Tri-state output * TTL compatible inputs and outputs * Battery backup(LL/SL-part) - 1.2V(min) data retention * Standard pin configuration - 48-fBGA
Operation Current/Icc(mA) 3 3
Standby Current(uA) LL 15 15
Temperature (C) 0~70 -40~85
PIN CONNECTION ( Top View )
1 2 3 4 A1 A4 A6 5 A2 NC 6
A0
BLOCK DIAGRAM
ROW DECODER I/O1 SENSE AMP
A B C D E F G H
/LB
/OE A0
IO9 /UB A3 IO10 IO11 A5
/CS IO1
ADD INPUT BUFFER PRE DECODER
COLUMN DECODER
I/O8 DATA I/O BUFFER
IO2 IO3 IO4 Vcc
Vss IO12 A17 A7
MEMORY ARRAY 256K x 16
WRITE DRIVER
I/O9
BLOCK DECODER
Vcc IO13 Vss A16 IO5 Vss IO15 IO14 A14 A15 IO6 IO7
A18
I/O16
IO16 NC A18 A8
A12 A13 /WE IO8 A9 A10 A11 NC
/CS /OE /LB /UB /WE
PIN DESCRIPTION
Pin Name /CS /WE /OE /LB /UB Pin Function Chip Select Write Enable Output Enable Lower Byte Control(I/O1~I/O8) Upper Byte Control(I/O9~I/O16) Pin Name I/O1~I/O16 A0~A18 Vcc Vss NC Pin Function Data Inputs / Outputs Address Inputs Power(2.7V~3.3V) Ground No Connection
Rev.01/Mar. 2002
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HY62UF16804B
ORDERING INFORMATION
Part No. Speed HY62UF16804B-DFC 55/70/85 HY62UF16804B-DFI 55/70/85 Note 1. C : Commercial, I : Industrial Power LL-part LL-part Package fBGA fBGA Temp. C I
ABSOLUTE MAXIMUM RATINGS (1)
Symbol VIN, VOUT Vcc TA TSTG PD TSOLDER Parameter Input/Output Voltage Power Supply Operating Temperature Storage Temperature Power Dissipation Ball Soldering Temperature & Time Rating -0.3 to Vcc+0.3 -0.3 to 3.6 0 to 70 -40 to 85 -55 to 150 1.0 260 * 10 Unit V V C C C W C * sec Remark
HY62UF16804B-C HY62UF16804B-I
Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS H X L L L /WE X X H H H /OE X X H H L /LB X H L X L H L L H L /UB X H X L H L L H L L Mode Deselected Deselected Output Disabled Output Disabled Read I/O1~I/O8 High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN I/O I/O9~I/O16 High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Power Standby Standby Active Active Active
L
L
X
Write
Active
Note: 1. H=VIH, L=VIL, X=don't care(VIH or VIL) 2. UB, LB(Upper, Lower Byte enable) These active LOW inputs allow individual bytes to be written or read. When LB is LOW, data is written or read to the lower byte, I/O1 -I/O8. When UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.
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HY62UF16804B
RECOMMENDED DC OPERATING CONDITION
Symbol Vcc Vss VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 2.7 0 2.2 -0.3(1) Typ. 3.0 0 Max. 3.3 0 Vcc+0.3 0.6 Unit V V V V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0C to 70C/ -40C to 85C Sym Parameter Test Condition ILI Input Leakage Current Vss < VIN < Vcc Vss < VOUT < Vcc, /CS = VIH or ILO Output Leakage Current /OE = VIH or /WE = VIL, /UB = /LB = VIH Operating Power Supply /CS = VIL, VIN = VIH or VIL, II/O = 0mA Icc Current Cycle Time=Min,100% duty, Average Operating II/O = 0mA, /CS = VIL,VIN = VIH or VIL Icc1 Current Cycle time = 1us, 100% duty, II/O = 0mA, /CS < 0.2V, VIN<0.2V /CS = VIH or /UB=/LB= VIH, TTL Standby Current ISB (TTL Input) VIN = VIH or VIL /CS > Vcc - 0.2V or Standby Current /UB=/LB > Vcc-0.2V, ISB1 LL (CMOS Input) VIN > Vcc-0.2V or VIN < Vss+0.2V VOL Output Low Voltage IOL = 2.1mA VOH Output High Voltage IOH = -1.0mA Note : Typical values are at Vcc = 3.0V, TA = 25C Min. -1 -1 Typ. Max. 1 1 3 20 2 0.3 Unit uA uA mA mA mA mA
2.4
1 -
15 0.4 -
uA V V
CAPACITANCE
(Temp = 25C, f = 1.0MHz) Symbol CIN COUT Parameter Conditio n VIN = 0V VI/O = 0V Max. 8 10 Unit pF pF
Input Capacitance(Add, /CS, /WE, /UB, /LB, /OE) Output Capacitance(I/O)
Note : These parameters are sampled and not 100% tested
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HY62UF16804B
AC CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0C to 70C/ -40C to 85C unless otherwise specified -55 -70 # Symbol Parameter Max. Min. Max. Min. READ CYCLE 1 tRC Read Cycle Time 55 70 2 tAA Address Access Time 55 70 3 tACS Chip Select Access Time 55 70 4 tOE Output Enable to Output Valid 30 35 5 tBA /LB, /UB Access Time 55 70 6 tCLZ Chip Select to Output in Low Z 10 10 7 tOLZ Output Enable to Output in Low Z 5 5 8 tBLZ /LB, /UB Enable to Output in Low Z 10 10 9 tCHZ Chip Deselection to Output in High Z 0 30 0 30 10 tOHZ Out Disable to Output in High Z 0 30 0 30 11 tBHZ /LB, /UB Disable to Output in High Z 0 30 0 30 12 tOH Output Hold from Address Change 10 10 WRITE CYCLE 13 tWC Write Cycle Time 55 70 14 tCW Chip Selection to End of Write 50 60 15 tAW Address Valid to End of Write 50 60 16 tBW /LB, /UB Valid to End of Write 50 60 17 tAS Address Set-up Time 0 0 18 tWP Write Pulse Width 45 50 19 tWR Write Recovery Time 0 0 20 tWHZ Write to Output in High Z 0 20 0 20 21 tDW Data to Write Time Overlap 25 30 22 tDH Data Hold from Write Time 0 0 23 tOW Output Active from End of Write 5 5 -85 Min Max. 85 10 5 10 0 0 0 10 85 70 70 70 0 60 0 0 35 0 5 85 85 40 85 30 30 30 25 -
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
AC TEST CONDITIONS
TA = 0C to 70C / -40C to 85C, unless otherwise specified PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Level tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW Output Load Other Value 0.4V to 2.2V 5ns 1.5V CL = 5pF + 1TTL Load CL = 30pF + 1TTL Load
AC TEST LOADS
VTM = 2.8V
1029 Ohm DOUT CL(1) 1728 Ohm
Note 1. Including jig and scope capacitance
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HY62UF16804B
TIMING DIAGRAM
READ CYCLE 1(Note 1,4)
tRC ADDR tAA tACS /CS tCHZ(3) tBA /UB ,/ LB tOE tOLZ(3) tBLZ(3) tCLZ(3) Data Valid tBHZ(3) tOH
/OE
tOHZ(3)
Data Out
High-Z
READ CYCLE 2(Note 1,2,4)
tRC ADDR tAA tOH Data Out Previous Data Data Valid tOH
READ CYCLE 3(Note 1,2,4)
/CS /UB, /LB
tACS tCLZ(3) Data Out Data Valid tCHZ(3)
Notes: 1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS and low /UB and /or /LB 2. /OE = VIL 3. Transition is measured + 200mV from steady state voltage. This parameter is sampled and not 100% tested. 4. /CS in high for the standby, low for active /UB and /LB in high for the standby, low for active
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HY62UF16804B
WRITE CYCLE 1 (1,4,8) (/WE Controlled)
tWC ADDR tWR(2) tCW /CS tAW tBW /UB,/LB tWP /WE tAS Data In High-Z tWHZ(3,7) Data Out tDW Data Valid tOW (5) (6) tDH
WRITE CYCLE 2 (Note 1,4,8) (/CS Controlled)
tWC ADDR tAS /CS tAW tBW /UB,/LB tWP /WE tDW Data In High-Z Data Valid tDH tCW tWR(2)
Data Out
High-Z
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HY62UF16804B
Notes: 1. A write occurs during the overlap of a low / WE, a low /CS and low /UB and /or /LB. 2. tWR is measured from the earlier of /CS, /LB, /UB, or /WE going high to the end of write cycle. 3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the output must not be applied. 4. If the /CS, /LB and /UB low transition occur simultaneously with the /WE low transition or after the /WE transition, outputs remain in a high impedance state. 5. Q(data out) is the same phase with the write data of this write cycle. 6. Q(data out) is the read data of the next address. 7. Transition is measured +200mV from steady state. This parameter is sampled and not 100% tested. 8. /CS in high for the standby, low for active /UB and /LB in high for the standby, low for active
DATA RETENTION ELECTRIC CHARACTERISTIC
TA = 0C to 70C / -40C to 85C Symbol Parameter VDR Vcc for Data Retention Test Condition /CS > Vcc - 0.2V or /UB=/LB > Vcc-0.2V, VIN > Vcc-0.2V or VIN < Vss+0.2V Vcc=1.5V, /CS > Vcc - 0.2V or /UB=/LB > Vcc-0.2V, VIN > Vcc-0.2V or VIN < Vss+0.2V Min 1.2 Typ Max 3.3 Unit V
ICCDR
Data Retention Current Chip Deselect to Data Retention Time Operating Recovery Time
LL
-
1.0
6
uA
TCDR TR
See Data Retention Timing Diagram
0 tRC(2)
-
-
ns ns
Notes: 1. Typical values are under the condition of TA = 25C . 2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
VCC 2.7V tCDR DATA RETENTION MODE tR
VIH VDR /CS or /UB & /LB Vss /CS>Vcc-0.2V or /UB=/LB > Vcc-0.2V
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HY62UF16804B
PACKAGE INFORMATION
48ball Fine Pitch Ball Grid Array Package (F)
BOTTOM VIEW
B A A1 CORNER INDEX AREA 6 A A B C D C E F G H C1/2 5 4 3 2 1
TOP VIEW
C1
B1/2
B1
SIDE VIEW
5
C
E1 E2 E SEATING PLANE A 4
r
3 D(DIAMETER)
Note
Symbol A B B1 C C1 D E E1 E2 r
Min. 5.9 8.4 0.3 0.9 0.20 -
Typ. 0.75 3.75 6.0 5.25 8.5 0.35 1.0 0.76 0.25 -
Max. 6.1 8.6 0.4 1.10 0.30 0.08
1. DIMENSIONING AND TOLERANCING PER ASME Y14. 5M-1994. 2. ALL DIMENSIONS ARE MILLIMETERS. 3. DIMENSION "D" IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE CROWN OF THE SOLDER BALLS. 5. THIS IS A CONTROLLING DIMENSION.
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HY62UF16804B
MARKING INSTRUCTION
Package
H Y
Marking Example
U F 6 8 0 4 B
fBGA
c
s
s
t
y
w
w
p
x
x
x
x
x
K
O
R
Index
* HYUF6804B *c : Part Name : Power Consumption -D
: Low Low Power
* ss
: Speed - 55 - 70 - 85 : 55ns : 70ns : 85ns : Commercial ( 0 ~ 70 C) : Industrial ( -40 ~ 85 C )
*t
: Temperature -C -I
*y * ww *p * xxxxx * KOR Note - Capital Letter - Small Letter
: Year (ex : 0 = year 2000, 1= year2001) : Work Week ( ex : 12 = work week 12) : Process Code : Lot No. : Origin Country
: Fixed Item : Non-fixed Item
Rev.01/Mar. 2002
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